Bump structure having a side recess and semiconductor structure including the same

ABSTRACT

In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor structure may have a first conductive structure and a second conductive structure arranged over a first substrate. A bump structure is arranged between the first conductive structure and a second substrate. A solder layer is configured to electrically couple the first conductive structure and the bump structure. The bump structure has a recess that is configured to reduce a protrusion of the solder layer in a direction extending from the first conductive structure to the second conductive structure.

REFERENCE TO RELATED APPLICATIONS

This Application is a Continuation of U.S. application Ser. No.15/057,302 filed on Mar. 1, 2016, which is a Continuation of U.S.application Ser. No. 14/800,934 filed on Jul. 16, 2015 (now U.S. Pat.No. 9,318,458 issued on Apr. 19, 2016), which is a Continuation of U.S.application Ser. No. 14/507,189 filed on Oct. 6, 2014 (now U.S. Pat. No.9,105,533 issued on Aug. 11, 2015), which is a Continuation-in-Part ofU.S. application Ser. No. 13/192,302 filed on Jul. 27, 2011 (now U.S.Pat. No. 8,853,853 issued on Oct. 7, 2014). The contents of all theabove-referenced Applications are hereby incorporated by reference intheir entirety.

BACKGROUND

Bump-on-Trace (BOT) structures have been used in flip chip packages,wherein metal bumps are bonded onto narrow metal traces in packagesubstrates directly, rather than bonded onto metal pads that havegreater widths than the respective connecting metal traces. The BOTstructures require smaller chip areas, and the manufacturing cost of theBOT structures is relatively low. However, there are technicalchallenges related to BOT structures.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the embodiments, and the advantagesthereof, reference is now made to the following descriptions taken inconjunction with the accompanying drawings, in which:

FIGS. 1A and 1B illustrate cross-sectional views of a package structurein accordance with an embodiment.

FIGS. 2A and 2B illustrate top and cross-sectional views of abump-on-trace (BOT) region, in accordance with some embodiments.

FIGS. 3A and 3B illustrate cross-sectional and top views of a metalbump, in accordance with some embodiments.

FIG. 3C illustrates protruding solder shorting with a neighboring metaltrace, in accordance with some embodiments.

FIGS. 4A-4E illustrate various embodiments of metal bumps with recessregions to reduce solder protrusion, in accordance with someembodiments.

FIGS. 5A-5I are top views of a bump structure having a single siderecess in accordance with some embodiments.

FIG. 6 is a top view of a bump structure having a single side recess inaccordance with some embodiments.

FIG. 7 is a top view of an array of bump structures having a single siderecess on a die in accordance with some embodiments.

FIG. 8 is a top view of a portion of an array of bump structures havinga single side recess on a die in accordance with some embodiments.

FIG. 9 is a top view of a die having bump structures having a singleside recess in accordance with some embodiments.

FIG. 10A is a top view of a of a BOT region in accordance with someembodiments.

FIG. 10B is a cross-sectional view of a BOT region in accordance withsome embodiments.

FIG. 11A is a cross-sectional view of a BOT region in accordance withsome embodiments.

FIG. 11B is a perspective view of a bump structure having a single siderecess in accordance with some embodiments.

DETAILED DESCRIPTION

The making and using of the embodiments of the disclosure are discussedin detail below. It should be appreciated, however, that the embodimentsprovide many applicable inventive concepts that can be embodied in awide variety of specific contexts. The specific embodiments discussedare merely illustrative, and do not limit the scope of the disclosure.

Cross-sectional views of a package structure comprising a Bump-on-Trace(BOT) structure 150 is provided in FIGS. 1A and 1B, in accordance withsome embodiments. The package structure 150 includes work piece 100bonded to work piece 200. Work piece 100 may be a device die thatincludes active devices such as transistors (not shown) therein,although work piece 100 may also be an interposer that does not haveactive devices therein. In an embodiment wherein work piece 100 is adevice die, substrate 102 may be a semiconductor substrate such as asilicon substrate, although it may include other semiconductormaterials. Interconnect structure 104, which includes metal lines andvias 106 formed therein and connected to the semiconductor devices, isformed on substrate 102. Metal lines and vias 106 may be formed ofcopper or copper alloys, and may be formed using damascene processes.Interconnect structure 104 may include a commonly known inter-layerdielectric (ILD, not shown) and inter-metal dielectrics (IMDs) 108. IMDs108 may comprise low-k dielectric materials, and may have dielectricconstants (k values) lower than about 3.0. The low-k dielectricmaterials may also be extreme low-k dielectric materials having k valueslower than about 2.5.

Work piece 100 may further include under-bump metallurgy (UBM) layer 110and a copper post (or pillar) 112 on UBM layer 110. Throughout thedescription, the copper post 112 is also referred to as acopper-containing bump or metal bump. Although copper post 112 is usedas an example in the description here and below, other types of metalbumps, such as solder bumps, may also be used in place of copper post112. The UBM layer 110 is disposed on a metal pad 105, which is part ofinterconnect structure 104. Between the interconnect structure 104 andthe UBM layer 110 not contacting the metal pad 105, there is apassivation layer 107. In some embodiments, the passivation layer 107 ismade of polyimide.

Work piece 200 may be a package substrate, although it may be otherpackage components such as interposers, for example. Work piece 200 mayinclude metal lines and vias 202 connecting metal features on oppositesides of work piece 200. In an embodiment, metal trace(s) 210 on thetopside of work piece 200 is electrically connected to ball grid array(B GA) balls 212 on the bottom side of work pieces 200 through metallines and vias 202. Metal lines and vias 202 may be formed in dielectriclayers 214, although they may also be formed in a semiconductor layer(such as a silicon layer, not shown) and in the dielectric layers thatare formed on the semiconductor layer.

Metal trace 210 is formed over a top dielectric layer in dielectriclayers 214. Metal trace 210 may be formed of substantially pure copper,aluminum copper, or other metallic materials such as tungsten, nickel,palladium, gold, and/or alloys thereof. FIG. 1A shows that the copperpost (or metal bump) 112 has a length of L₁, in accordance with someembodiments. Work pieces 100 and 200 are bonded to each other throughsolder layer 220, which may be formed of a lead-free solder, a eutecticsolder, or the like. Solder layer 220 is bonded to, and contacts, thetop surfaces of metal trace 210 and copper post 112.

FIG. 1B illustrates a cross-sectional view of the package structure 150shown in FIG. 1A, wherein the cross-sectional view is obtained from theplane crossing line 2-2 in FIG. 1A. As shown in FIG. 1B, solder layer220 may also contact the sidewalls of metal trace 210 after solderreflow. The reflowed solder layer 220 may also move along surfaces 113of copper post 112 and cover portions or all of surfaces 113 (notshown). In some embodiments, there is a capping layer between copperpost 112 and solder layer 220. The capping layer could be used toprevent the formation of inter-metallic compound(s) from copper andsolder. In some embodiments, the capping layer includes nickel (Ni).Exemplary details of materials and processes used in forming work piece100 are described in U.S. application Ser. No. 13/095,185, entitled“REDUCED-STRESS BUMP-ON-TRACE (BOT) STRUCTURES,” filed on Apr. 27, 2011,which is incorporated herein by reference in its entirety.

After the bonding of work pieces 100 and 200, a mold underfill (MUF)(not shown) may be filled into the space between work pieces 100 and200, in accordance with some embodiments. Accordingly, a MUF may also befilled into the space between neighboring metal traces 210.Alternatively, no MUF is filled, while air fills the space between workpieces 100 and 200, and fills the space between neighboring metal traces210. FIG. 1B shows that the copper post (or metal bump) 112 has a widthof W₁, in accordance with some embodiments. FIG. 1B also shows that themetal trace 210 has a width W₂, in accordance with some embodiments.

In some other embodiments, the ratio of L₁/W₁ is greater than 1. In someembodiments, the ratio of L₁/W₁ is equal to or greater than about 1.2.In some embodiments, the L₁ is in a range from about 10 μm to about 1000μm. In some embodiments, W1 is in a range from about 10 μm to about 700μm. In some embodiments, W₂ is in a range from about 10 μm to about 500μm. The structure as shown in FIGS. 1A and 1B is referred to as being aBOT structure, because solder layer 220 is formed directly on the topsurface and sidewalls of metal trace 210, and not on a metal pad thathas a width significantly greater than width W₂ of metal trace 210. Insome embodiments, the ratio of W₁/W₂ is in a range from about 0.25 toabout 1.

FIG. 2A shows a top view of a BOT region 200, in accordance with someembodiments. FIG. 2A shows a number of metal bumps 201-208 over metaltraces 211-218. The metal traces provide the function of interconnectionand connects metal bumps to one another. For example, metal trace 211connects metal bump 201 and metal bump 202, in accordance with someembodiments. Metal bumps 201-208 include copper post 112, UBM layer 110and solder layer 220 described above.

FIG. 2B shows a cross-sectional view of the BOT region 200 cut along A-Aline, in accordance with some embodiments. FIG. 2B shows that metalbumps 201, 203, and 205 are placed on metal traces 211, 213, and 215.FIG. 2B also shows cross-sections of metal traces 212 and 214. Crosssections of metal bumps 201, 203, and 205 show a UBM layer 110, copperposts 112 with solder layer 220. The solder layer 220 wrap around theexposed surfaces of metal traces 211, 213 and 215 after reflow. FIG. 2Balso shows that the solder layer 220 between copper post 112 of metalbump 201 protrudes beyond surface 231 of copper post 112 with a distance“D₁”. As mentioned above, the reflowed solder of the solder layer 220may also move along surfaces 113 of copper post 112 and cover portionsor all of surfaces 113. Due to the pressure exerted by the work piece100 on work piece 200, the surface 221 of solder layer 220 extendsbeyond the surface 113 of the copper post with a maximum distance of“D₁.” Larger D₁ reduces the distance D₂ between the surface 113 and theneighboring metal trace surface 232 and increases the risk of shortingbetween metal traces 211 and 212. In addition, D₂ may be shortened bymis-alignment or by alignment error. With shrinking feature sizes andpitches, minimizing D₁ is important to improve yield. In someembodiments, D₂, the minimum distance between a bump and a neighboringmetal trace, is specified to be equal to or greater than about 0.1 μm toavoid shorting. In some embodiments, the distance between the edge ofcopper post 112 to a closest edge of a metal trace 212, or D₁+D₂, is ina range is equal to or greater than about 1 μm. In some otherembodiments, the distance is equal to or greater than about 5 μm.

FIG. 3A shows a cross-sectional view of metal bump 201 before it iscoupled to metal trace 211 and before solder reflow, in accordance withsome embodiments. FIG. 3A shows that metal bump 201 includes a copperpost 112 and a solder layer 220. There is an optional capping layer 126between the copper post 112 and the solder layer 220. The cap layer 126could act as a barrier layer to prevent copper in the Cu pillar 125 fromdiffusing into a bonding material, such as solder alloy, that is used tobond the substrate 101 to external features.

The solder layer 220 and copper post 112 may be formed by plating overthe UBM layer 110, in accordance with some embodiments. Prior to thesolder reflow, the solder layer 220 and copper post 112 share the samesurfaces 113. FIG. 3B shows a top view of metal bump 201 of FIGS. 2A and2B before bonding and reflow, in accordance with some embodiments. FIG.3B shows the outline 310 of copper post 112. Outline 310 is also theoutline for UBM layer 110. The copper post 112 shown in FIG. 3B is inthe shape of a race track with two hemispheres (M sections) coupled to arectangle (N section). The diameter of the two hemispheres W₁ is thesame as the width of the rectangle, which is also shown in FIG. 1B. Thetotal length of the metal bump 201 is L₁, as shown in FIG. 1A, and thelength of the rectangle is L_(R). Although the example in FIG. 3B is inthe shape of a race track, other elongated shapes, such as oval shape,etc, are also applicable.

After reflow and under the pressure of being pressed against metal trace211, solder layer 220 tends to protrude the most near the center regionof the rectangle (N section). This could be due to less surface tensionon the side walls of the center region (N section), in comparison to theedge sections (M sections).

As described above, the protrusion of the solder layer 220 (with amaximum protruding distance D1) increases the risk of shorting. FIG. 3Cshows a cross-sectional view of a BOT structure, in accordance with someembodiments. FIG. 3C shows that the solder layer 220 of a metal bump201* making contact with a neighboring metal trace 212* due to solderextrusion and some alignment error, which is expected due to processvariation. As a result, it is desirable to reduce the protrudingdistance D1 to reduce of risk of shorting between metal bump 201, metaltrace 211, and metal trace 212.

FIG. 4A shows a top view of a metal bump 400, in accordance with someembodiments. The metal bump is similar to metal bumps 201 describedabove. FIG. 4A shows an outline 401 of outer boundary of the UBM layer100, which also significantly match the outer boundaries of copper post112 and solder layer 220 before solder reflow. FIG. 4A shows that inorder to reduce solder protrusion to reduce the shortest distancebetween the metal bump, such as metal bump 201, and a neighboring metaltrace, such as metal trace 212, the width of the rectangular section (Nsection) of the metal bump is reduced from W₁ to W₄. Each side of therectangular section is reduced by a width of W₃. FIG. 4B shows a sideview of metal bump 400, in accordance with some embodiments. Metal bump400 includes a solder layer 220, a copper post 112 and an UBM layer 110,in accordance with some embodiments. Alternatively, metal bump 400 couldrefer only to the copper post 112 or the copper post 112 with the UBMlayer 110. The height of the solder layer 220 is H₁ and the height ofthe copper post is H₂. The height of the UBM layer is H₃. In someembodiments, H₁ is in a range from about 10 μm to about 50 μm. In someembodiments, H₂ is in a range from about 10 μm to about 70 μm. In someembodiments, H₃ is in a range from about 3 μm to about 15 μm.

As mentioned above, solder layer 220 tends to protrude in the middlesection (or N section). By reducing the width of the middle section, thereflowed solder will fill the recess space created by the reduced widthof the middle section (or rectangular section N). As a result, the riskof shorting due to protruding solder material can be reduced and yieldcan be improved. Such reduction to reduce shorting and to improve yieldis important for advanced packaging. In some embodiments, the recessregion is region R, which is shown in FIG. 4C. FIG. 4A shows that thereare two recess regions R for metal bump 400. Recess region R includesrecess region A of the solder layer 220, recess region B of copper post112, and recess region C of the UBM layer 110, as shown in FIG. 3C inaccordance with some embodiments. Equation (1) shows the volume ofregion R, in accordance with some embodiments.R _(volume) =W ₃ ×L _(R)×(H ₁ +H ₂ +H ₃)   (1)

Although reducing W₁ could reduce the risk of shorting, W₁ cannot bereduced too much to prevent insufficient coverage of solder on the metaltrace underneath. In addition, small W₁ would lead to small UBM area,which could increase the stress at the interface 118 (as shown in FIGS.1A and 1B) next to IMDs 108 and could result in interfacialdelamination. Such interfacial delamination is a reliability concern andcan affect yield. In some embodiments, the maximum width of the recessregion W₃ is in a range from about 1 μm to about 30 μm. In someembodiments, the ratio of W₃ to W₁ is in a range from about 0.02 toabout 0.5. In some embodiments, the volume ratio of recess regions R tothe solder layer 220 of the metal bump 400 is greater than or equal toabout 0.01, which means that the recess regions R for metal bump 400 isequal to or greater than about 1% of the volume of the solder layer 220.In some other embodiments, the volume ratio of recess regions R to thesolder layer 220 of the metal bump 400 is equal to or less than about0.1. In some embodiments, a ratio of the surface areas (orcross-sectional areas) of recess regions R, as viewed in FIG. 4A, to thesurface area (or cross-sectional area) of bump 400 is equal to orgreater than about 0.01. In some other embodiments, a ratio the surfaceareas (or cross-sectional areas) of recess regions R, as viewed in FIG.4A, to the surface area (or cross-sectional area) of bump 400 is equalto or less than about 0.1.

Other shapes of recess regions combined with various profiles of metalbumps may also be used to reduce solder metal protrusion. FIG. 4D showsa top view of a metal bump 400′, in accordance with some embodiments.Metal bump 400′ is similar to metal bump 400. The corners 402 of regionsR of FIGS. 4A, 4B, and 4C are straight (or 90°). The corners 403 of therecess region R′ of FIG. 4D is has an angle α. Angle α may be equal toor greater than 90°. A greater than 90° corner angle, α, may have lessstress than a straight corner. However, angle α may be designed with anangle less than 90°, in accordance with some embodiments. In someembodiments, the M sections (or end sections) of metal bump 400 do notneed to be in hemispherical shape. Other shapes are also possible.Further, the recess regions do not need to be formed by straight walls.FIG. 4E shows a metal bump 400* with the recess regions having curvedside walls, in accordance with some embodiments. Other shapes andcurvatures of sidewalls of recess regions are also possible.

The metal bumps described above without the recess regions have a crosssection in the shape of a race track. Bumps with other shapes of crosssections may also be used. For example, the shape of a cross section maybe an oval shape. The top views of metal bumps 400 may be in anyelongated shapes, including a rectangle with rounded corners. Recessregion(s) may be formed in such bumps to allow solder layers to fill(fully or partially) in the recess region(s) after reflow to reduce therisk of shorting.

The embodiments of bump and bump-on-trace (BOT) structures provide bumpswith recess regions for reflowed solder to fill. The recess regions areplaced in areas of the bumps where reflow solder is most likely toprotrude. The recess regions reduce the risk of bump to trace shorting.As a result, yield can be improved.

FIG. 5A is a top view of a bump structure 500 having a single siderecess in accordance with some embodiments. Bump structure 500 issimilar to bump structure 400 (FIG. 4A) except that bump structure 500includes a recess on a single side of the bump structure. Bump structure500 has a general race track shape. Bump structure 500 includes a recess510 in one side. A side 520 of bump structure 500 opposite recess 510 issubstantially straight. Ends 530 of bump structure 500 connect side 520to the side having recess 510. Bump structure 500 has an overall width“a” and an overall length “b”. Recess 510 has a first length “c” closestto an outer surface of bump structure 500. Recess 510 has a secondlength “d” closest to side 520. A depth “e” of recess 510 is a distancebetween the outer surface of bump structure 500 and a point of therecess closest to side 520.

Bump structure 500 is usable for connecting one die to another in apackage. Bump structure 500 includes a conductive material. In someembodiments, the conductive material is copper, aluminum, tungsten, oranother suitable conductive material. Bump structure 500 connects onedie to another using a reflowed solder layer or a reflowed solder ball.During a reflow process, liquefied solder flows into recess 510. Incomparison with bump structures which do not include recess 510, bumpstructure 500 is able to achieve a smaller pitch between adjacent bumpstructures with reduced risk of bridging between solder material of theadjacent bump structures. In some embodiments, bump structure 500 ispart of a bump on trace (BOT) structure. In some embodiments, bumpstructure 500 is configured to connect to another bump structure. Insome embodiments, the other bump structure includes at least onerecessed side. In some embodiments, the other bump structure includes norecessed sides.

Ends 530 of bump structure 500 are continuous curves. In someembodiments, ends 530 are straight edges with rounded corners, such thata general shape of bump structure 500 is a rectangle having roundedcorners as seen in FIG. 5B. In some embodiments, ends 530 have adifferent shape, such as a triangular (FIG. 5C), a polygon (FIG. 5D), adiscontinuous curve (FIG. 5E) or another suitable shape. Ends 530 have asame shape. In some embodiments, one end 530 has a different shape fromthe other end 530 (FIG. 5F).

Bump structure 500 is usable for a 16 nanometer (nm) technology chip. Insome embodiments, bump structure 500 is usable for a 28 nm technologychip. In some embodiments, bump structure 500 is usable for a 20 nmtechnology chip. In some embodiments, bump structure 500 is sized for atechnology node other than 16 nm, 20 nm or 28 nm. In some embodiments,overall width “a” ranges from about 10 microns (μm) to about 200 μm. Insome embodiments, overall width “a” ranges from about 25 μm to about 50μm. If the overall width of bump structure 500 is too small, anelectrical resistance of bump structure 500 increases and negativelyimpacts performance of a die connected to the bump structure; or a riskof the bump structure breaking during a packaging process increases. Inaddition, a risk of an open connection during a packaging operation dueto misalignment increases if the overall width is too small. If theoverall width of bump structure 500 is too great, a risk of bridging ofsolder materials of adjacent bump structures is increased. In someembodiments, overall length “b” ranges from about 20 μm to about 400 μm.In some embodiments, overall length “b” ranges from about 50 μm to about80 μm. If the overall length of bump structure 500 is too small, theelectrical resistance of the bump structure increases and adverselyimpacts performance of a device connected to the bump structure, in someinstances. In addition, a mechanical strength of bump structure 500 isreduced and a risk of breaking during a packaging process increases ifthe overall length of the bump structure is too small. A risk ofmisalignment causing an open connection also increases if the overalllength of bump structure 500 is too small. If the overall length of bumpstructure 500 is too large, a risk of bridging between solder materialsof adjacent bump structures increases. In some embodiments, a ratio ofoverall width “a” to overall length “b” ranges from about 0.5 to about1.0. If the ratio of overall width “a” to overall length “b” is toosmall, a mechanical strength of bump structure 500 is adverselyimpacted, in some instances. If the ratio of overall width “a” tooverall length “b” is too great, a size of bump structure 500 isincreased without a significant increase in performance andfunctionality, in some instances.

A surface of recess 510 closest to side 520 is parallel to side 520. Insome embodiments, the surface of recess 510 closest to side 520 isangled with respect to side 520 (FIG. 5G). In some embodiments, thesurface of recess 510 closest to side 520 is curved (FIG. 5H). In someembodiments, the curve is convex. In some embodiments, the curve isconcave. In some embodiments, the second length “d” is less than orequal to about 30 μm. In some embodiments, the second length “d” is lessthan or equal to about 15 μm. In some embodiments, second length “d” isequal to 0 (FIGS. 5G and 5H). In some embodiments, a ratio of the secondlength “d” to the overall length “b” is less than or equal to about 0.3.In some embodiments, the ratio of the second length “d” to the overalllength “b” is less than or equal to about 0.15. The second length issubstantially zero when the surface closest to side 520 is curved orsidewalls of recess 510 intersect. If second length “d” or the ratiobetween the second length and the overall length “b” is too large, theelectrical resistance of bump structure 500 increases and negativelyimpacts performance of a die connected to the bump structure; or a riskof the bump structure breaking during a packaging process increases, insome instances. In addition, a risk of an open connection during apackaging operation due to misalignment increases if second length “d”or the ratio between the second length and the overall length “b” is toolarge.

First length “c” of recess 510 provides an opening for solder materialto flow into the recess during a reflow process. In some embodiments,first length “c” ranges from about 5 μm to about 50 μm. In someembodiments, first length “c” ranges from about 8 μm to about 15 μm. Insome embodiments, first length “c” is substantially equal to secondlength “d” (FIG. 5I). In some embodiments, a ratio between first length“c” and overall length “b” ranges from about 0.3 to about 0.5. If firstlength “c” is too large or the ratio between first length “c” andoverall length “b” is too great, the electrical resistance of bumpstructure 500 negatively impacts performance of a die connected to thebump structure, in some instances. Additionally, a risk of bumpstructure 500 breaking during a packaging process increases or an openconnection during a packaging operation due to misalignment increases iffirst length “c” is too large or the ratio between first length “c” andoverall length “b” is too great. If first length “c” is too small or theratio between first length “c” and overall length “b” is too small, asize of recess 510 is not sufficient to reduce the risk of bridgingbetween adjacent bump structures, in some instances.

Depth “e” of recess 510 provides a volume to receive solder materialduring a reflow process. In some embodiments, depth “e” ranges fromabout 0.5 μm to about 15 μm. In some embodiments, depth “e” ranges fromabout 1 μm to about 15 μm. In some embodiments, a ratio of depth “e” tooverall width a ranges from about 0.05 to about 0.2. If depth “e” is toolarge or the ratio between depth “e” and overall width a is too great,the electrical resistance of bump structure 500 negatively impactsperformance of a die connected to the bump structure, in some instances.Additionally, a risk of bump structure 500 breaking during a packagingprocess increases or an open connection during a packaging operation dueto misalignment increases if depth “e” is too large or the ratio betweendepth “e” and overall width “a” is too great. If depth “e” is too smallor the ratio between depth “e” and overall width “a” is too small, thesize of recess 510 is not sufficient to reduce the risk of bridgingbetween adjacent bump structures, in some instances.

As a pitch between bump structures decreases, an overall size of thebump structures is reduced. For example, a 28 nm technology node chipincludes a bump pitch of about 100 μm to about 160 μm, in someinstances. For a chip which is about 10 mm×10 mm, the number of bumpstructures is approximately 1000 bump structures to connect the chip toanother structure. In contrast, a 16 nm technology node chip includes abump pitch of about 80 μm to about 120 μm, in some embodiments. The 16nm technology node chip will have 3-4 times the number of bumpstructures for a 10 mm×10 mm chip in comparison with the 28 nmtechnology node chip. In some embodiments, a 10 nm technology chipincludes a bump pitch of about 40 μm to about 100 μm. The 10 nmtechnology chip will have even more bump structures for a 10 mm×10 mmchip than a 16 nm technology node chip. Due to the increased number ofbump structures on a chip as technology nodes decrease, recessing bothsides of the bump structures has a greater overall impact in an abilityof a chip including the recessed bump structures to maintainfunctionality when packaged with another structure due to increasedresistance. In addition, mechanical strength of a connection pointbetween a bump structure having a single recess side (FIG. 5A) and a dieis greater than a connection point between a bump structure havingrecesses on both sides (FIG. 4A) and a die. By recessing a single sideof bump structures 500, the increased resistance and reduced mechanicalstrength of the bump structure resulting from the recess is reduced incomparison with a bump structure which is recessed on both sides of thebump structure.

FIG. 6 is a top view of a bump structure 600 having a single side recessin accordance with some embodiments. Bump structure 600 includes arecess 610 offset from a center of a length of the bump structure. Insome embodiments, an offset distance z from a center of recess 610 tothe center of the length of bump structure 600 is less than or equal toabout 7 μm. In some embodiments, a ratio of offset z to an overalllength of bump structure 600 is less than or equal to about 0.15. Ifoffset z is too large or the ratio between offset z and the overalllength of bump structure 600 is too great, a risk of an open connectionduring a packaging operation due to misalignment increases, in someinstances.

FIG. 7 is a top view of an array 700 of bump structures 750 having asingle side recess on a die in accordance with some embodiments. Array700 includes a pitch P between adjacent bump structure 750. Center lines710 a and 710 b divide array 700 into four substantially equalquadrants. Each bump structure 750 of array 700 includes a singlerecess, similar to bump structure 500 (FIG. 5). A line 710 c extendsfrom a center of array 700 to a corner of the array. In someembodiments, bump structures 750 which are in a core region or a cornerregion of array 700 are angled so that a longitudinal axis of the bumpstructure is substantially parallel to line 710 c.

A side of bump structures 750 including a recess is oriented toward aclosest center line of center line 710 a and center line 710 b. That is,a bump structure, such as bump structure 750 a, which is located closerto center line 710 a than center line 710 b includes a recess in theside of the bump structure facing center line 710 a. Conversely, a bumpstructure, such as bump structure 750 b, located closer to center line710 b than center line 710 a includes a recess in the side of the bumpstructure facing center line 710 b. In some embodiments, a bumpstructure, such as bump structure 750 c, which is equidistant fromcenter line 710 a and center line 710 b includes a recess in the side ofthe bump structure facing center line 710 b. In some embodiments, a bumpstructure 750 which is equidistant from center line 710 a and centerline 710 b includes a recess in the side of the bump structure facingcenter line 710 a. In some embodiments, a first bump structure 750 whichis equidistant from center line 710 a and center line 710 b has a recessin the side of the first bump structure facing center line 710 a and asecond bump structure 750 which is equidistant from center line 710 aand center line 710 b has a recess in the side of the second bumpstructure facing center line 710 b. In some embodiments, pitch P betweenadjacent bump structures 750 ranges from about 40 μm to about 200 μm.

Bump structures 750 are bonded to another die using a solder reflowprocess. In some embodiments, bump structures 750 are part of an activedie, a passive die, an interposer, or another suitable connectionstructure. The recess of bump structures 750 is oriented toward theclosest center line 710 a or 710 b in order to capture reflowed soldermaterial during a packaging process. During the solder reflow process, adie being bonded to bump structures 750 is heated. In some embodiments,the die is an active die, a passive die, an interposer or anothersuitable connection structure. When the die cools the die shrinks. Amagnitude of the shrinkage of the die is based on a coefficient ofthermal expansion of a material of the die and an overall size of thedie. This shrinking causes edges of the bonded die to move inwardly in aplane parallel to array 700 toward center line 710 a and center line 710b. The movement of the edges of the die pulls solder material, which isstill cooling from the reflow process toward, center line 710 a andcenter line 710 b. For example, referring to FIG. 3C, a center line of adie having trace 211* and trace 212* is located to a right side of trace212*. As the die shrinks toward a center of the die following a reflowprocess solder 220 is pulled toward the center of the die. In structureswhich do not include the recess of bump structures 750, the pulling ofthe solder material during shrinkage of the die is most likely to causebridging in a direction toward the center line 710 a and center line 710b. By including the recesses of bump structures 750 oriented toward aclosest center line of center line 710 a or center line 710 b, the riskof bridging in the direction of shrinkage is reduced in comparison withstructures that do not include the recess. In some embodiments, a depth,e.g., depth “e” (FIG. 5A), of the recess of bump structures 750 isdetermined based on the coefficient of thermal expansion of the diebonded to bump structures 750 or a size of the die boned to bumpstructures 750. In some embodiments, as the coefficient of thermalexpansion of the die bonded to bump structures 750 increases the depthof the recesses of bump structures 750 increases. In some embodiments,as the size of the die bonded to bump structures 750 increases, thedepth of the recesses of bump structures 750 increases.

FIG. 8 is a top view of a portion of an array 800 of bump structureshaving a single side recess on a die in accordance with someembodiments. FIG. 8 includes half of array 800, i.e., the half of array800 below a center line 810 a. In comparison with array 700 (FIG. 7),array 800 includes at least one bump structure which does not include arecess. Array 800 includes a core region 820 having bump structures.Bump structures in core region 820 include non-recessed sides. In someembodiments, at least one bump structure in core region 820 includes arecess. The bump structures of core region 820 have a longitudinal axisat an angle with respect to center line 810 a and center line 810 b.Array 800 also includes a corner region 830 having bump structures. Bumpstructures in corner region 830 include non-recessed sides, similar tobump structures in core region 820. In some embodiments, at least onebump structure in corner region 830 includes a recess. The bumpstructures in corner region 830 have a longitudinal axis oriented at anangle to center line 810 a and center line 810 b. A central peripheralregion 840 of array 800 also includes bump structures. Bump structuresof central peripheral region 840 include non-recessed sides. In someembodiments, at least one bump structure in central peripheral region840 includes a recess. The bump structures in central peripheral region840 have a longitudinal axis substantially parallel to a closest centerline of center line 810 a or center line 810 b. In some embodiments, anarrangement of bump structures in corner region 830 and core region 820has a layout based on the bump arrangement described in U.S. Pat. No.8,598,691, which is incorporated herein by reference in its entirety.Array 800 also includes a recess peripheral region 850 including bumpstructures. Each bump structure in recess peripheral region 850 includesa recess oriented toward a closest center line of center line 810 a orcenter line 810 b. Recess peripheral region 850 is located at an edge ofarray 800 between central peripheral region 840 and corner region 830.The bump structures of recess peripheral region 850 have a longitudinalaxis substantially parallel to the closest center line of center line810 a or center line 810 b.

As discussed above, recessed bump structures have increased electricalresistance in comparison with a bump structure having non-recessedsides. The recessed bump structure also has a lower mechanical strengththan non-recess bump structures. By concentrating recessed bumpstructures in regions of array 800 where a bridging risk is highest, theabove drawbacks of recessing the sides of the bump structures aremitigated in other portions of array 800. Recess peripheral region 850is a location of highest bridging risk of array 800 because the edge ofthe die bonded to the bump structures of array 800 experiences a largestmagnitude of shrinkage following a reflow process.

Array 800 includes recess peripheral region 850 having a single row ofbump structures. In some embodiments, recess peripheral region 850includes multiple rows of bump structures. In some embodiments, array800 includes a single recess peripheral region 850. In some embodiments,the single recess peripheral region 850 includes a single recessed bumpstructure. In some embodiments, the single recessed bump structure isadjacent to a corner region 830 of array 800.

In some embodiments, as the coefficient of thermal expansion of the diebonded to array 800 increases, a size of recess peripheral region 850increases. In some embodiments, as the size of the die bonded to array800 increases, the size of recess peripheral region 850 increases. Insome embodiments, the size of recess peripheral region 850 is determinedbased on empirical evidence from previous package structures.

FIG. 9 is a top view of a die 900 having bump structures having a singleside recess in accordance with some embodiments. Die 900 includes coreregion 920 similar to core region 820 (FIG. 8). Die 900 further includescorner region 930 similar to corner region 830. Die 900 further includesrecess peripheral region 950 similar to recess peripheral region 850. Insome embodiments, die 900 also includes a central peripheral regionsimilar to central peripheral region 840.

A first corner region extending parallel to center line 910 a has alength x1 parallel to center line 910 a. In some embodiment, a ratio oflength x1 to an overall length L of die 900 parallel to center line 910a ranges from about 0.02 to about 0.1. If the ratio of length x1 to theoverall length of die 900 is too great, a risk of bridging of bumpstructures within the first corner region increases, in some instances.If the ratio of length x1 to the overall length of die 900 is too small,a mechanical structure of the bump structures in the first corner regionis needlessly reduced or the electrical resistance of the bumpstructures in the first corner region is needlessly increased, in someinstances.

A first recess peripheral region extending parallel to center line 910 ahas a length y₁ parallel to center line 910 a. In some embodiment, aratio of length y₁ to an overall length L of die 900 parallel to centerline 910 a ranges from about 0.2 to about 0.3. If the ratio of length y₁to the overall length of die 900 is too great, a mechanical structure ofthe bump structures in the first recess peripheral region is needlesslyreduced or the electrical resistance of the bump structures in the firstrecess peripheral region is needlessly increased, in some instances. Ifthe ratio of length y₁ to the overall length of die 900 is too small, arisk of bridging of bump structures within the first corner regionincreases, in some instances.

A second corner region extending parallel to center line 910 a has alength x₂ parallel to center line 910 a. In some embodiment, a ratio oflength x₂ to an overall length of die 900 parallel to center line 910 aranges from about 0.02 to about 0.1. If the ratio of length x2 to theoverall length L of die 900 is too great, a risk of bridging of bumpstructures within the first corner region increases, in some instances.If the ratio of length x₂ to the overall length of die 900 is too small,a mechanical structure of the bump structures in the first corner regionis needlessly reduced or the electrical resistance of the bumpstructures in the first corner region is needlessly increased, in someinstances. In some embodiments, length x₂ is equal to length x₁. In someembodiments, length x₂ is different from length x₁. In some embodiments,a magnitude of length x₁ or length x₂ is determined based on empiricalinformation, a coefficient of thermal expansion of a die bonded to die900, or a size of the die bonded to die 900.

A second recess peripheral region extending parallel to center line 910a has a length y₂ parallel to center line 910 a. In some embodiment, aratio of length y₂ to an overall length L of die 900 parallel to centerline 910 a ranges from about 0.2 to about 0.3. If the ratio of length y₂to the overall length of die 900 is too great, a mechanical structure ofthe bump structures in the first recess peripheral region is needlesslyreduced or the electrical resistance of the bump structures in the firstrecess peripheral region is needlessly increased, in some instances. Ifthe ratio of length y₂ to the overall length of die 900 is too small, arisk of bridging of bump structures within the first corner regionincreases, in some instances. In some embodiments, length y₂ is equal tolength y₁. In some embodiments, length y₂ is different from length y₁.In some embodiments, a magnitude of length y₁ or length y₂ is determinedbased on empirical information, a coefficient of thermal expansion of adie bonded to die 900, or a size of the die bonded to die 900.

A third corner region extending parallel to center line 910 b has alength i₁ parallel to center line 910 b. In some embodiment, a ratio oflength i₁ to an overall length K of die 900 parallel to center line 910b ranges from about 0.02 to about 0.1. If the ratio of length i₁ to theoverall length of die 900 is too great, a risk of bridging of bumpstructures within the first corner region increases, in some instances.If the ratio of length i₁ to the overall length of die 900 is too small,a mechanical structure of the bump structures in the first corner regionis needlessly reduced or the electrical resistance of the bumpstructures in the first corner region is needlessly increased, in someinstances.

A third recess peripheral region extending parallel to center line 910 bhas a length j₁ parallel to center line 910 b. In some embodiment, aratio of length j₁ to an overall length K of die 900 parallel to centerline 910 b ranges from about 0.2 to about 0.3. If the ratio of length j₁to the overall length of die 900 is too great, a mechanical structure ofthe bump structures in the first recess peripheral region is needlesslyreduced or the electrical resistance of the bump structures in the firstrecess peripheral region is needlessly increased, in some instances. Ifthe ratio of length j₁ to the overall length of die 900 is too small, arisk of bridging of bump structures within the first corner regionincreases, in some instances.

A fourth corner region extending parallel to center line 910 b has alength i₂ parallel to center line 910 b. In some embodiment, a ratio oflength i₂ to an overall length K of die 900 parallel to center line 910b ranges from about 0.02 to about 0.1. If the ratio of length i₂ to theoverall length of die 900 is too great, a risk of bridging of bumpstructures within the first corner region increases, in some instances.If the ratio of length i₂ to the overall length of die 900 is too small,a mechanical structure of the bump structures in the first corner regionis needlessly reduced or the electrical resistance of the bumpstructures in the first corner region is needlessly increased, in someinstances. In some embodiments, length i₂ is equal to at least one oflength x₁, length x₂ or length i₁. In some embodiments, length x₂ isdifferent from at least one of length x₁, length x₂ or length i₁. Insome embodiments, a magnitude of length i₁ or length i₂ is determinedbased on empirical information, a coefficient of thermal expansion of adie bonded to die 900, or a size of the die bonded to die 900.

A fourth recess peripheral region extending parallel to center line 910b has a length j₂ parallel to center line 910 b. In some embodiment, aratio of length j₂ to an overall length K of die 900 parallel to centerline 910 b ranges from about 0.2 to about 0.3. If the ratio of length j₂to the overall length of die 900 is too great, a mechanical structure ofthe bump structures in the first recess peripheral region is needlesslyreduced or the electrical resistance of the bump structures in the firstrecess peripheral region is needlessly increased, in some instances. Ifthe ratio of length j₂ to the overall length of die 900 is too small, arisk of bridging of bump structures within the first corner regionincreases, in some instances. In some embodiments, length j₂ is equal toat least one of length y₁, length y₂ or length j₁. In some embodiments,length j₂ is different from at least one of length y₁, length y₂ orlength j₁. In some embodiments, a magnitude of length j₁ or length j₂ isdetermined based on empirical information, a coefficient of thermalexpansion of a die bonded to die 900, or a size of the die bonded to die900.

FIG. 10A is a top view of a BOT region 1000 in accordance with someembodiments. BOT region 1000 is similar to work piece 200 and similarelements have a same reference number increased by 200. In comparisonwith work piece 200 BOT region 1000 includes bump structures 1001-1008including a recess 1050. Each recess 1050 is facing toward a center of adie including BOT region 1000, i.e., to a right side of FIG. 10A. Recess1050 is configured to receive solder which is reflowed during a bondingof bmp structures 1001-1008 to corresponding traces 1011-1018. Bumpstructures 1001-1008 are wider than traces 1011-1018. FIG. 10A includeseach trace 1011-1018 fully landed on by a corresponding bump structure1001-1008. In some embodiments, at least one trace 1011-1018 is onlypartially landed on by a corresponding bump structure 1001-1008. Traces1011-1018 are conductive lines. In some embodiments, traces 1011-1018include copper, aluminum, tungsten, or another suitable conductivematerial.

FIG. 10B is a cross-sectional view of BOT region 1000 taken along lineB-B in accordance with some embodiments. BOT region 1000 includes afirst work piece 100′ bonded to a second work piece 200′. Second workpiece 100′ includes traces 1011-1018. Traces 1011-1018 are electricallyconnected to active elements or passive elements within second workpiece 200′. First work piece 100′ includes bump structures 1001-1008.Bump structures 1001-1008 are electrically connected to active elementsor passive elements within the first work piece 100′.

Bump structure 1001-1008 includes a conductive post 1022, a soldermaterial 1024 and a UBM layer 1026. During a bonding process, soldermaterial 1024 is reflowed in order to bond with a corresponding trace1011-1018. When solder material 1024 is reflowed a portion of thereflowed solder material flows into recess 1050. The portion of soldermaterial 1024 which flows into recess 1050 reduces a total width of thebonded bump structure 1001-1008 in comparison with a bump structurewhich does not include recess 1050. The reduced width of bump structure1001-1008 reduces facilitates a reduced pitch between bump structures byreducing a risk of bridging between adjacent bump structures in an arrayhaving the reduced pitch. Reducing a pitch between bump structures1001-1008 facilitates an increased density of connections between firstwork piece 100′ and second work piece 200′.

FIG. 11A is a cross-sectional view of a BOT region 1100 in accordancewith some embodiments. BOT region 1110 is similar to BOT region 1000(FIG. 10B). Same elements have a same reference number increased by 100.In comparison with BOT region 1000, BOT region 1100 does not includefirs work piece 100′. Conductive post 1122 is able to be bonded to anadditional work piece. In some embodiments, the additional work pieceincludes a work piece including active circuitry, a work piece includingpassive circuitry, an interposer or another suitable work piece. Recess1150 is indicated as a dotted line because the recess is located in aplane other than the cross-sectional view of BOT region 1100.

FIG. 11B is a perspective view of a bump structure 1100′ in accordancewith some embodiments. An overall shape of bump structure 1100′ isrectangular and includes flat end faces and rounded corners. Bumpstructure 1100′ also includes a trapezoidal recess. In some embodiments,the overall shape of bump structure 1100′ is different from arectangular shape, as indicated in FIGS. 5A-5I. In some embodiments, therecess of bump structure 1100′ is different form a trapezoidal shape, asindicated in FIGS. 5A-5I.

One aspect of this description relates to a semiconductor structure. Thesemiconductor structure comprises a first conductive structure and asecond conductive structure arranged over a first substrate. A bumpstructure is arranged between the first conductive structure and asecond substrate. A solder layer is configured to electrically couplethe first conductive structure and the bump structure. The bumpstructure comprises a recess configured to reduce a protrusion of thesolder layer in a direction extending from the first conductivestructure to the second conductive structure.

Another aspect of this description relates to a semiconductor structure.The semiconductor structure comprises a conductive trace arranged on afirst work piece. A conductive bump is arranged between the conductivetrace and a second work piece. The conductive bump has a recess region.A solder bump is arranged between the conductive trace and theconductive bump. The solder bump fills the recess region at leastpartially.

Still another aspect of this description relates to a semiconductorstructure. The semiconductor structure comprises a metal trace arrangedon a first work piece. The metal trace extends in a first direction. Aconductive bump is arranged on a second work piece. The conductive bumphas a recess facing in a second direction that is different than thefirst direction. A solder layer is between the metal trace and theconductive bump. The solder layer fills a part of the recess.

Although the embodiments and their advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the embodiments as defined by the appended claims. Moreover,the scope of the present application is not intended to be limited tothe particular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure, processes, machines, manufacture,compositions of matter, means, methods, or steps, that performsubstantially the same function or achieve substantially the same resultas the corresponding embodiments described herein may be utilizedaccording to the disclosure. Accordingly, the appended claims areintended to include within their scope such processes, machines,manufacture, compositions of matter, means, methods, or steps. Inaddition, each claim constitutes a separate embodiment, and thecombination of various claims and embodiments are within the scope ofthe disclosure.

What is claimed is:
 1. A semiconductor structure, comprising: a firstconductive structure and a second conductive structure arranged over afirst substrate; a bump structure arranged between the first conductivestructure and a second substrate; and a solder layer configured toelectrically couple the first conductive structure and the bumpstructure, wherein the bump structure comprises a recess configured toreduce a protrusion of the solder layer in a direction extending fromthe first conductive structure to the second conductive structure. 2.The semiconductor structure of claim 1, wherein the recess straddles aline that extends through a center of the bump structure along thedirection extending from the first conductive structure to the secondconductive structure.
 3. The semiconductor structure of claim 1, whereinthe bump structure has a recessed side facing the second conductivestructure, which comprises the recess; and wherein the bump structurehas a non-recessed side facing away from the second conductivestructure, which does not have a recess.
 4. The semiconductor structureof claim 3, further comprising: an under-bump metallurgy (UBM) layerarranged between the second substrate and the bump structure, wherein anouter sidewall of the UBM layer is linearly aligned with thenon-recessed side of the bump structure.
 5. The semiconductor structureof claim 1, wherein the recess has a volume that is substantially equalto or greater than about 1% of a volume of the solder layer.
 6. Thesemiconductor structure of claim 1, wherein the recess has a volume thatis substantially equal to or less than about 10% of a volume of thesolder layer.
 7. The semiconductor structure of claim 1, wherein therecess extends into the bump structure along the direction to a depththat is in a range of between approximately 2% and approximately 50% ofa maximum width of the bump structure along the direction.
 8. Thesemiconductor structure of claim 1, wherein the recess has a curvedsidewall.
 9. A semiconductor structure, comprising: a conductive tracearranged on a first work piece; a conductive bump arranged between theconductive trace and a second work piece, wherein the conductive bumphas a recess region; and a solder bump arranged between the conductivetrace and the conductive bump, wherein the solder bump fills the recessregion at least partially.
 10. The semiconductor structure of claim 9,wherein the conductive trace comprises a metal.
 11. The semiconductorstructure of claim 9, wherein a ratio of a width of the conductive bumpto a length of the conductive bump is in a range of between about 0.5 toabout 1.0.
 12. The semiconductor structure of claim 9, wherein therecess region extends from a bottom surface of the conductive bump to atop surface of the conductive bump.
 13. The semiconductor structure ofclaim 12, wherein a ratio of a depth of the recess region to a width ofthe conductive trace is in a range of between about 0.05 to about 0.2.14. A semiconductor structure, comprising: a metal trace arranged on afirst work piece, wherein the metal trace extends in a first direction;a conductive bump arranged on a second work piece, wherein theconductive bump has a recess facing in a second direction that isdifferent than the first direction; and a solder layer between the metaltrace and the conductive bump, wherein the solder layer fills a part ofthe recess.
 15. The semiconductor structure of claim 14, wherein thesecond direction is perpendicular to the first direction.
 16. Thesemiconductor structure of claim 14, wherein the conductive bumpstraddles an edge of the metal trace along the second direction.
 17. Thesemiconductor structure of claim 14, further comprising: a second metaltrace that is oriented in parallel to the metal trace along a shared runlength that extends in the first direction for a distance that isgreater than zero.
 18. The semiconductor structure of claim 14, whereinthe recess has a center that is offset from a center of the conductivebump along the first direction by a non-zero offset.
 19. Thesemiconductor structure of claim 18, wherein a ratio of the non-zerooffset to a length of bump structure along the first direction is lessthan or equal to about 0.15.
 20. The semiconductor structure of claim14, wherein the metal trace extends past opposite sides of theconductive bump in the first direction.